Atomic scale investigation of Si and Ce-rich nanoclusters in Ce-doped SiO1.5thin films

Colossal Magnetoresistance in Ce Doped Manganese Oxides

Micro-Scale Patterning of Ce

INTRODUCTION trying to control the environment experienced by individual Control of the cellular environment is crucial for undercells lie in the relevant scales of size as well as the character ding the behavior of cells and for engineering cellular of the stimuli. These scales of size range from angstroms (for ction (Jiang and Whitesides, 2003; Whitesides etal., 2001; molecular detail), throu...

The system Ce–Zn–Si for <33.3 at.% Ce: phase relations, crystal structures and physical properties

Institute of Physical Chemistry, University Vienna, Austria. E-mail: fai.failamani@ [email protected]; peter. 142779524; Tel: +43 1427752456 Institute of Solid State Physics, Vienn Hauptstraße 8-10, A-1040 Vienna, Aus [email protected]; Fax: +43 15880113 Masaryk University, Faculty of Science, Dep 61137, Czech Republic Masaryk University, Central European Ins 753/5, Brno 62500...

Photoionization of Ce 3+ -ce

Photoionization of the Ce Ce process has been studied using the random phase approximation with exchange method in the energy region 100-150 eV. Comparison of our results with the recent measurement [Müller et al, Phys. Rev. Lett. 101, 133001 (2008)] confirms the suppression effect of the carbon cage in the endohedral fullerene Ce@C+82 photoionization. The reasons for the cause of the confineme...

Atomic scale investigation of silicon nanowires and nanoclusters

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in...